Applications / Advanced Logic

Advanced Logic

Enabling the atomic-scale etch precision that makes today's most advanced AI processors manufacturable

  1. FinFET
  2. GAA
Macro of an advanced-node logic processor
Fig. 01 — Advanced-node logic deviceSUB-3NM
// The GAA shift

GAA changed everything.

The etch process has to keep up.

Researcher in cleanroom gloves handling advanced-node semiconductor wafers
Fig. 02 — Advanced-node wafer handlingCLEANROOM

The processors that run AI are built at sub-3nm. The etch process that makes them possible demands atomic-scale precision.

As the industry moves from FinFET to Gate-All-Around (GAA), the process complexity at the etch level increases significantly. Conventional RIE cannot meet the precision these architectures demand – and the gap only widens as nodes shrink.

// Where AAT fits

Where AAT Fits

Building GAA structures requires removing sacrificial silicon-germanium (SiGe) layers from between stacked silicon sheets with extremely high selectivity to silicon. The process window is too narrow, the surfaces too sensitive, and the tolerance for damage essentially zero. Isotropic ALE is the only process that makes nanosheet release possible.

Beyond nanosheet release, inner spacer formation, self-aligned contact trimming, and backside power delivery structures all introduce new etch steps where atomic-scale control is the requirement, not a preference.

The precision gap↑ Precision required
FinFETGAASub-3nm

The gap widens as nodes shrink

  • AAT ALEMeets the precision requirement
  • Conventional RIECannot keep up

AAT's platform handles these precision finishing steps – not replacing high-throughput RIE for bulk removal, but deployed at the steps where surface quality and dimensional accuracy are non-negotiable. Because the AI optimizer is running in real time, process engineers spend less time on recipe development and more time on device results. At a node where process windows are measured in angstroms, that speed of iteration is not a convenience – it's a competitive advantage.

// Demonstrated performance

Demonstrated Performance

High Precision Mode
~0 Å/ cycle
Etch per cycle (EPC)
  • Synergy Factor>80%
  • Linearity (R²)>0.9947
  • Cycle Time~2 seconds
Self-limiting saturationÅ / time →
Self-limiting · ~1 s
  • Modification saturation~2.0 Å at 1 second
  • Removal saturation~2.1 Å at 1 second

Source: SPIE Advanced Lithography + Patterning 2026, Paper 13984-24

// The AAT advantage

The AAT Advantage

01

Purpose-built for precision, not retrofitted

AAT's decoupled chamber architecture independently controls the modification and removal steps – giving process engineers a level of step-level tunability that coupled-source tools cannot match.

02

AI-native process control

Machine learning models optimize gas flow, power, and timing parameters continuously – as an active part of how the tool runs. For GAA development, where the margin for error is essentially zero and manual recipe tuning can take weeks, real-time AI control means faster convergence to a production-worthy process window with tighter within-wafer uniformity.

03

Production-relevant cycle times

~2 second cycle time – approximately 10× faster than conventional ALE tools – means atomic precision no longer comes at a throughput penalty.

// Let's talk

Working on a GAA or advanced logic
process challenge?

Let's connect to discuss your requirements
// Build the angstrom era

Let's etch the future, one atom at a time.

Talk to our team about ALE process development, equipment demonstration, or partnership opportunities.